0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 mm bt222 2 features epitaxial planar die c onstruct ion. com plem entary pnp t ype av ailable(m mbt2907) absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo 60 v collector-emit ter voltage v ceo 30 v em itt er-b ase voltage v ebo 5 v collector current i c 600 m a pow er dissi pation p d 250 m w thermal resist ance from junct ion to am bient r ja 500 /w oper ating and storage and tem pera ture rang e t j , t stg -55 to +150 el ectrical characteris tics t a = 2 5 parameter sym bol test c onditions min typ ma x unit collector-base breakdow n voltage v (br)cbo i c = 10 a, i e = 0 75 v collector-em itt er breakdow n voltage v (br)ceo i c = 10 m a, i b = 0 40 v em itt er- base b reakdow n voltage v (br)ebo i c = 10 a, i c = 0 6 v collector cutof f c urr ent i cbo v cb =50v, i e =0 10 na em itt er cutoff c urr ent i ebo v eb = 3v, i c =0 100 na v ce =10v, i c = 0.1m a 35 v ce =10v, i c = 150ma 100 300 v ce =10v, i c = 500ma 30 i c = 150 m a; i b = 15 m a 0.4 v i c = 500 m a; i b = 50 m a 1.6 v i c = 150 m a; i b = 15 m a 1.3 v i c = 500 m a; i b = 50 m a 2.6 v transition frequen cy f t i c = 20 m a; v ce = 20 v; f = 100 m hz 250 mh z delay ti m e t d 10 ns rise ti m e t r 25 ns storage tim e t s 225 ns fall ti m e t f 60 ns * pulse t est: puls e w idth 300s, duty cy cle 2.0%. h fe dc curre nt gain v cc =30v, i c =150 m a,i b1 =-i b2 =15ma v cc =30v, v be(off) =-0.5v, i c =150 m a , i b1 = 15m a collect or- em itt er saturation voltage * v ce(sat) v be(sat) base-emit ter saturation voltage * mark ing mar king m1b sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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